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AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: -- P1dB: 50 W typical. -- Power gain @ P1dB = 14.0 dB continuous wave (CW). -- Efficiency @ P1dB = 54% typical CW. -- Return loss: -10 dB.
Device Performance Features
High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years.
Figure 1. AGR19045EF (flanged) Package Typical two carrier N-CDMA performance: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8--13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 - 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1 - 2.5 MHz and f2 + 2.5 MHz: -- Output power (POUT): 9.5 W. -- Power gain: 15 dB. -- Efficiency: 24.8%. -- IM3: -34.5 dBc. -- ACPR: -49.5 dBc.
Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW output power. Large signal impedance parameters available.
ESD Rating*
AGR19045EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4
EDGE Features
Typical EDGE performance, 1990 MHz, 26 V, IDQ = 400 mA: -- Output power (POUT): 18 W typical. -- Power gain: 14.5 dB. -- Efficiency: 35% typical. -- Spectral regrowth: @ 400 kHz = -62 dBc. @ 600 kHz = -74 dBc. -- Error vector magnitude (EVM) = 2.0%.
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C Derate Above 25 C Operating Junction Temperature Storage Temperature Range Symbol VDSS VGS PD -- TJ TSTG Value 65 -0.5, 15 115 0.67 200 -65, 150 Unit Vdc Vdc W W/C C C Symbol RJC Value 1.5 Unit C/W
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 3. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) = 200A Drain-source Breakdown Voltage (VGS = 0 V, ID = 38 A) V(BR)DSS IGSS IDSS GFS 65 -- -- -- -- -- -- -- -- 1.3 75 4 -- -- -- -- Adc Adc S Vdc Symbol Min Typ Max Unit
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.4 A) Gate Threshold Voltage (VDS = 10 V, ID = 130 A) Drain-source On-voltage (VGS = 10 V, ID = 0.4 A) Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA)
--
VGS(TH) VDS(ON) VGS(Q)
3.0 3.7 0.3 --
4.8
Vdc
Vdc Vdc
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min -- Typ 1.0 Max Unit -- pF
CRSS Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) GPS Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third-order Intermodulation Distortion IM3 (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.228 MHz integration bandwidth centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth centered at f1 - 885 kHz and f2 + 885 kHz, referenced to the carrier channel power) IRL Input Return Loss (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Output Power at 1 dB Gain Compression P1dB (VDD = 28 V, POUT = 45 W CW, f = 1990 MHz, IDQ = 400 mA) Ruggedness (VDD = 28 V, POUT = 45 W CW, IDQ = 400 mA, f = 1930 MHz, VSWR = 10:1 [all phase angles])
14.5 -- --
15.0 24.8 -34.5
-- -- --
dB % dBc
--
-49.5
--
dBc
-- 45
-10 50
-- --
dB W
No degradation in output power.
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19045EF
FB1 VGG R1 C23 Z8 C22 C12 Z9 C13 C14 C15 C20 C16 C17 C18 Z11 VDD
Z14 Z13 C5 Z6 2 1 3 DUT Z7
C19
C1
C2 Z1
C3 Z2
C4 C6 Z3 Z4
Z10
Z12 RF OUTPUT
Z5
C21
RF INPUT
C7 PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
2
3
1
Parts List: Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.250 in. x 0.160 in.; Z5, 0.180 in. x 0.260 in.; Z6, 0.400 in. x 0.735 in.; Z7, 0.355 in. x 0.840 in.; Z8, 0.120 in. x 0.280 in.; Z9, 0.525 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.; Z11, 0.245 in. x 0.067 in.; Z12, 0.290 in. x 0.067 in.; Z13, 0.370 in. x 0.030 in.; Z14, 0.280 in. x 0.050 in. ATC (R) B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF. ATC S case chip capacitor: C21: 0.2 pF Kemet(R) B case chip capacitors: C2, C16: 0.1 F CDR33BX104AKWS. Tantalum capacitor: C17, 1 F, 50 V, T491C. Vitramon (R) 1206: C4, C14: 22000 F. Johanson Giga-Trim(R) variable capacitor C7: 0.4 pF--2.5 pF. Murata (R) 0805: C3, C15: 0.01 F, GRM40X7R103K100AL. Sprague(R) tantalum surface-mount chip capacitor: C1, C18, C19, C23: 22 F, 35 V. Fair-Rite (R) ferrite bead: FB1: 2743019447. Fixed film chip resistor: R1: 12 , 0.25 W, 0.08 x 0.13. PCB etched circuit boards. Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout
Figure 2. AGR19045EF Test Circuit
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170
U CT
0.6
Z0 = 10
IN D
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
LOA D <
0.2
0.49
RD TOW A 7 TH S 0.4 -170 EN G V EL WA 60 < -90 -1
0.1
0.4
0.48
) / Yo (-jB
0.6
-85
CE
N TA EP SC
1. 0
0.2
6 0.4 4 0.0 0 -15 -80
IV CT
IN
DU
0.3
-75
R
,O o)
-65
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
MHz (f) 1930 (f1) 1960 (f2) 1990 (f3)
ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 2.79 - j8.63 4.94 - j6.00 2.64 - j8.20 4.82 - j5.91 2.38 - j7.78 4.47 - j5.79
Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2) ZS
DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
0.
1.8
18
0 -5 -25
4 0.
0.
f1
0.2
-70
06
0.
4
5
0.3
0.1
3
2.
0
7
-30
-60
0.3
0.1
4
6
-
35
-70
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
0.4
-90
0.12
0.38
0.11 -100
0.39
CA P AC I TI
0.1
0.4
-110
VE
RE AC TA N
0.0
0.4 1
9
-12
CE CO M
0
0.0
PO N
0.4
8
2
EN
T
(-j
-1
0.
0.4
40
4
Z X/
f3
-20
ZS
5
5
0.0
-15
4.0
3.
0
0.8
f3
f1
0.6
U ES
5.0
1.
0
ZL
-10
0.
8
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
10
0.
0.2 0.3
-4 0
8
0.4
10 0.1
-1
0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEGR LE OF EES ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES
20
L E OF ANG
0.2
0. 19 0. 31
50
-20
0.2 2
0.2 8
0.2 9 0.2 1 -30
0. 07 30 0.
43
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
5 0
P d = 4 .3 d m 1B 7 7 B (5 .5 W 49 ) P d = 4 .2 d m 3B 8 0 B (6 .0 W 63 )
1 7 1 6 1 5 1 4
4 5
P U (d m O T B )Z
GS P
1 2
PU OT
3 5
1 1 1 0 9 8
3 0
2 5 1 5
2 0
2 5
Test Conditions: VDD = 28 Vdc, IDQ = 400 mA, CW center frequency = 1960 MHz.
PN(d m B )Z I
3 0
3 5
7 4 0
Figure 4. CW POUT vs. PIN
50 45 40 35 (%)Z 30 25 20 15 10 5 0 25 30 35 40 45 GPS 2.25 MHz 885 kHz 1.25 MHz
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 ADJACENT CHANNEL POWER (dBc)Z
GPS (dB),
Test Conditions: VDD = 28 V, IDQ = 550 mA, f1 = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/Average = 9.72 dB @ 0.01% probability (CCDF). Channel spacing (bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
POUT (dBm) AVERAGEZ
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. Power
G S(d )Z B P
4 0
1 3
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
6 0 5 5 5 0 4 5 -1 0 -2 0 -3 0 -4 0 GS P -5 0 -6 0 -7 0 4 5
(% )Z
4 0 3 5 3 0 2 5 2 0 1 5 1 0 5 0 3 0 AP C IM 3
3 5
Test Conditions: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz. 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/average = 9.72 dB @ 0.01% probability (CCDF). Channel spacing (bandwidth); ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
P U (d m O T B )Z
4 0
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. Power
ID = 700 m A Q ID = 600 m A Q
15.25
ID = 550 m A Q ID = 500 m A Q
G S(dB)Z P
14.25
ID = 400 m A Q
ID = 300 m A Q
13.25
30
35
Test Conditions: VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
PO T (dBm )Z U
40
IM (d c), A P (d c) Z 3B CR B
G S(d ), B P
45
Figure 7. 2-Carrier N-CDMA, GPS vs. POUT
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-35 -40 -45 AC (dBc)Z PR -50 ID = 400 mA Q -55 -60 -65 -70 ID = 700 mA Q ID = 600 mA Q ID = 550 mA Q
ID = 300 mA Q
ID = 500 mA Q
30
35 POU (dBm)Z T
40
45
Test Conditions: VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
Figure 8. ACPR vs. POUT
-2 0 -2 5 -3 0
IM (d c)Z 3B
-3 5 -4 0
ID = 3 0 m 0A Q
ID = 4 0 m 0A Q ID = 7 0 m 0A Q
-4 5 -5 0 ID = 5 0 m 0A Q -5 5 3 0
ID = 6 0 m 0A Q ID = 5 0 m 5A Q
3 5
P U (d m O T B )Z
4 0
4 5
Test Conditions: VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
Figure 9. IM3 vs. POUT
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
55 50 45
(%), EVM (%)Z
-25 -30
SPECTRAL REGROW (dBc)Z TH
-35 -40 -45 -50 400 kHz -55 -60 -65 600 kHz GP S EVM 0 5 10 15 20 25 POU (W) AVERAGEZ T 30 35 40 -70 -75 -80
40 35 30 25 20 15 10 5 0
Test Conditions: VDD = 26 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. POUT
5 5 5 0
(% E M (% ), V )Z
GPS (dB),
-2 5 -3 0 -4 0 -4 5 -5 0 -5 5 4 0 kH 0 z GS P -6 0 -6 5 -7 0 -7 5 3 0 3 5 -8 0 4 0
S E T A R G O H(d c) P C R L E R WT BZ
4 5 4 0 3 5 3 0 2 5 2 0 1 5 1 0 5 0 0 5 1 0 EM V 1 5 2 0 2 5 P U (W A E A E ) VRGZ OT 6 0 kH 0 z
-3 5
Test Conditions: VDD = 28 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE.
G S(d ), PB
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. POUT
AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR19045EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
1
PEAK DEVICES AGR19045XF AR G 21045F YYWWLL XXXXX Y W LL YW ZZZZZZZ ZZZZZZZ
1 3 3 2
2
Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.

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